| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nitride semiconductor multilayer structure which has low dislocation density, and a method of manufacturing the same.SOLUTION: A nitride semiconductor multilayer structure includes: a substrate selected from the group of (m)-surface sapphire substrates and nitride semiconductor substrates having (11-22) main surfaces; a mask layer formed at a part of a surface of the substrate; and a nitride semiconductor layer formed on the surface of the substrate so as to cover the mask layer. A part of the nitride semiconductor layer sandwiched between two mask layers which adjoin each other in cross-sectional view has a region G1 surrounded with points A, B, and C and a region G2 surrounded with the points B and C, and a point D, and the region G2 is lower in dislocation density than the region G1.</p> |
