HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF AMPLIFIER TRANSISTORS

摘要

A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

主权项

1. A pixel cell for use in a high dynamic range image sensor, comprising:
a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode; a transfer transistor disposed in the semiconductor material coupled between a floating diffusion and the photodiode; a first amplifier transistor disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell; and a second amplifier transistor disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.