发明名称 SOLAR CELL UNIT AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention provides a solar cell unit, which comprises a semiconductor plate of first-type doping or second-type doping; wherein the semiconductor plate has a first surface and a second surface opposite to the first surface; the semiconductor plate comprises a first-type doping region and second-type doping region, both the first-type doping region and the second-type doping region are located on the first surface of the semiconductor plate; a first sheet is provided on the side surface of the semiconductor plate that is adjacent to the first-type doping region, and a second sheet is provided on the side surface of the semiconductor plate that is adjacent to the second type doping region.
申请公布号 US2014238461(A1) 申请公布日期 2014.08.28
申请号 US201313950510 申请日期 2013.07.25
申请人 LUO Zhijiong;ZHU Huilong;Yin Haizhou 发明人 LUO Zhijiong;ZHU Huilong;Yin Haizhou
分类号 H01L31/18;H01L31/04 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method for manufacturing an array of solar cell units comprises: a) providing a substrate (100) of first-type doping or second-type doping; the substrate (100) comprises a first surface (101) and a second surface (102) opposite to the first surface (101); b) forming at least two first grooves (300) on the first surface (101) of the substrate (100), and forming at least one second groove (301) on the second surface (102) of the substrate (100); wherein, each of the second groove (301) is located between two neighboring first grooves (300), and the depth of the first groove (300) and the second groove (301) is smaller than the thickness of the substrate (100); c) doping the sidewalls of the first groove (300) to form a first-type doping region (400) on the sidewalls thereof; d) removing a part of the substrates (100) at the bottoms of the first groove (300) and the second groove (301) such that the depth of the first groove (300) and the second groove (301) is still smaller than the thickness of the substrate (100); e) forming a protection layer (401) on the sidewalls of the first groove (300); f) continuing to remove a part or all of the substrates (100) at the bottoms of the first groove (300) and the second groove (301) to form a plurality of parallel semiconductor plates (500); wherein, the two neighboring semiconductor plates (500) are connected by a sheet; g) performing doping to the sidewalls of the first groove (300), wherein the type of dopant is opposite to the dopant type used in step c), forming a second-type doping region (402) on sidewalls of the first groove (300) that have not been covered by the protection layer (401), so as to form a vertical strip plate array of solar cell units.
地址 Poughkeepsie NY US