| 摘要 |
Provided are a system for ion milling used in a plasma etching system including a plasma etching chamber, a plurality of process gas sources connected to the plasma etching chamber, a wireless frequency bias source, and a controller and a method for the same. The plasma etching chamber includes a substrate support member. The substrate support member is not pivotally moved and rotated. The substrate support member may support a substrate to be processed without using a mechanical clamp device on the top surface thereof. The plasma etching chamber further includes an upper electrode opposite to a top surface of the substrate support member. A plurality of process gas sources are connected to the plasma etching chamber. The wireless frequency bias source is connected to the substrate support member. The controller is connected to the plasma etching chamber, the process gas sources, and the wireless frequency bias source. The controller includes a logic which is stored in a computer readable medium to perform an ion milling process in the plasma etching chamber. |
