发明名称 |
METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON |
摘要 |
The success rate of multi-pulled single crystal growth by the Czochralski method is enhanced by the use of a melt crucible having an amount of barium on an inner surface thereof which varies inversely with the diameter of the crucible. At least one single crystal is separated from the melt by a free span method. |
申请公布号 |
SG11201401263P(A) |
申请公布日期 |
2014.08.28 |
申请号 |
SG11201401263P |
申请日期 |
2012.07.10 |
申请人 |
SILTRONIC AG |
发明人 |
KATO, HIDEO;KYUFU, SHINICHI |
分类号 |
C30B15/10;C30B15/22;C30B29/06;C30B35/00 |
主分类号 |
C30B15/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|