发明名称 |
Semiconductor Device and Method of Forming Topside and Bottom-side Interconnect Structures Around Core Die with TSV |
摘要 |
A semiconductor device has a core semiconductor device with a through silicon via (TSV). The core semiconductor device includes a plurality of stacked semiconductor die and semiconductor component. An insulating layer is formed around the core semiconductor device. A conductive via is formed through the insulating layer. A first interconnect structure is formed over a first side of the core semiconductor device. The first interconnect structure is electrically connected to the TSV. A second interconnect structure is formed over a second side of the core semiconductor device. The second interconnect structure is electrically connected to the TSV. The first and second interconnect structures include a plurality of conductive layers separated by insulating layers. A semiconductor die is mounted to the first interconnect structure. The semiconductor die is electrically connected to the core semiconductor device through the first and second interconnect structures and TSV. |
申请公布号 |
US2014239509(A1) |
申请公布日期 |
2014.08.28 |
申请号 |
US201414267777 |
申请日期 |
2014.05.01 |
申请人 |
STATS ChipPAC, Ltd. |
发明人 |
Kim Sun Mi;Kim OhHan;Lee KyungHoon |
分类号 |
H01L23/48;H01L25/00;H01L23/00 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of making a semiconductor device, comprising:
providing a first conductive layer; disposing a first semiconductor die including a conductive via formed through the first semiconductor die over the first conductive layer; forming an insulating layer over the first semiconductor die; and disposing a second conductive layer over the first semiconductor die and insulating layer. |
地址 |
Singapore SG |