METHOD AND DEVICE FOR DETERMINING PHOTOLITHOGRAPHY PROCESS PARAMETER

摘要

The present invention relates to the field of liquid crystal display. Provided are a method and a device for determining a photolithography process parameter. The method for determining a photolithography process parameter comprises: forming a plurality of photoresist regions (201) of different film thicknesses on a substrate; performing exposure and development on the photoresist on the substrate in a preset exposure mode, and measuring a photolithography indicator parameter (202) corresponding to a developed pattern in each of the photoresist regions; and determining a photoresist film thickness and an exposure mode (203) corresponding to the optimal photolithography indicator parameter. By means of the technical solution, in a condition that only one substrate is used, the photolithography process parameter corresponding to the optimal photolithography indicator parameter can be obtained, so that the use of the photoresist and the substrate is greatly reduced and the test time is saved.