SYSTEM AND METHOD FOR PERFORMING A WET ETCHING PROCESS

摘要

A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.

主权项

1. A method for wet etching a substrate using a single wafer wet etching processing system that includes a plurality of stations to produce a substrate having a desired final etch profile, comprising the steps of:
measuring, at a measurement station, an initial thickness information for a particular substrate; calculating an etch profile for the particular substrate according to the initial thickness information and according to the desired final etch profile; generating an etch recipe for the particular substrate according to the calculated etch profile; and etching the particular substrate according to the etch recipe in order to achieve the desired final etch profile; wherein the plurality of stations are disposed within a housing and are accessed by an automated substrate transfer device that is configured to controllably move the substrate between stations, thereby allowing measurements of the substrate in real-time as the substrate is undergoing etch processing.