A METHOD OF PRODUCING A P-TYPE NITRIDE SEMICONDUCTOR AND A METHOD OF MANUFACTURING A NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE BY USING THE SAME

摘要

One aspect of the present invention provides a method for manufacturing a p-type nitride semiconductor which includes the steps of growing a first nitride semiconductor layer doped with a p-type impurity with a first concentration; thermally processing the first nitride semiconductor layer to activate the p-type impurity; and growing a second nitride semiconductor layer doped with the p-type impurity with a second concentration which is higher than the first concentration on the first nitride semiconductor layer.