WAFER EDGE PROTECTION

摘要

A semiconductor device and a method for forming a device are presented. A wafer substrate having first and second regions is provided. The second region includes an inner region of the substrate while the first region includes an outer peripheral region from an edge of the substrate towards the inner region. A protection unit is provided above the substrate. The protection unit includes a region having a total width WT defined by outer and inner rings of the protection unit. The substrate is etched to form at least a trench in the second region of the substrate. The WT of the protection unit is sufficiently wide to protect the first region of the wafer substrate such that the first region is devoid of trench.

主权项

1. A method for forming a device comprising:
providing a wafer substrate having first and second regions, wherein the second region includes an inner region of the substrate while the first region includes an outer peripheral region from an edge of the substrate towards the inner region; providing a protection unit above the substrate, wherein the protection unit includes a region having a total width WT defined by outer and inner rings of the protection unit; and etching the substrate to form at least a trench in the second region of the substrate, wherein the WT of the protection unit is sufficiently wide to protect the first region of the wafer substrate such that the first region is devoid of trench.