| 发明名称 |
METAL-OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS AND METHODS OF MANUFACTURING THE SAME |
| 摘要 |
According to example embodiments a TFT includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a channel layer on the gate insulating layer, the channel layer including an indium-rich metal-oxide layer; a first electrode on one end of the channel layer; a second electrode on the other end of the channel layer; and a passivation layer on the channel layer between the first and second electrodes. |
| 申请公布号 |
US2014239291(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201314062137 |
申请日期 |
2013.10.24 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
SON Kyoung-seok;RYU Myung-kwan;JEONG Jae-Kyeong |
| 分类号 |
H01L29/786;H01L29/24;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor (TFT) comprising:
a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a channel layer on the gate insulating layer,
the channel layer including an indium-rich metal-oxide layer; a first electrode on one end of the channel layer; a second electrode on an other end of the channel layer; and a passivation layer on the channel layer between the first and second electrodes. |
| 地址 |
Suwon-Si KR |
