MEMORY ELEMENTS WITH SERIES VOLATILE AND NONVOLATILE SWITCHES

摘要

A memory element includes a nonvolatile switch to be set to a first low resistance state by applying a voltage higher than a positive threshold voltage and to a second high resistance state by applying another voltage more negative than a negative threshold voltage. The memory element further includes a volatile switch in series with the nonvolatile switch, the nonvolatile switch to be set to a third low resistance state by applying a current higher than a threshold current and to fourth high resistance state by applying a current lower than the threshold current. A method for operating a memory array with memory elements with series volatile and nonvolatile switches is also provided.

主权项

1. A memory element comprising:
a nonvolatile switch to be set to a first resistance state by applying a voltage higher than a positive threshold voltage and to a second resistance state by applying another voltage more negative than a negative threshold voltage; a nondielectric volatile switch in series with the nonvolatile switch, the volatile switch to be set to a third low resistance state by applying a current higher than a threshold current and to a fourth high resistance state by applying a current lower than the threshold current, in which the volatile switch has a volatile switch threshold voltage greater than one third of a maximum threshold voltage, in which the maximum threshold voltage comprises a largest value of an absolute magnitude of the negative threshold voltage and the positive threshold voltage; and, wherein the threshold current of the volatile switch is the current through the volatile switch at its threshold voltage.