| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device in which both formation of a window region and resistance enhancement of a semiconductor layer corresponding to the window region are achieved with satisfactorily controlling impurities. SOLUTION: The semiconductor laser device of end-surface emitting type and includes an n-cladding layer 13, an active layer 15, a p-cladding layer 17, a p-contact layer 18, an upper electrode 20, and a current narrowing layer 17a above a semiconductor substrate 11. The semiconductor laser device has a window region 23 with a band gap wider than a non-window region in at least a region adjacent to the edge on an emission side of the laser light. A p type impurity concentration in the window region 23 of the p-contact layer 18 is lower than that in the non-window region 24 of the p-contact layer 18 by≥2×10<SP>17</SP>cm<SP>-3</SP>. The current narrowing layer 17a has a lattice constant larger than that of layers formed on up and down sides of the current narrowing layer 17a. COPYRIGHT: (C)2011,JPO&INPIT |
