SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A semiconductor light emitting device includes a semiconductor region which includes a light emitting structure; and an electrode layer which includes a first high reflection metal layer which is in contact with a first part of the semiconductor region and reflects light from the light emitting structure, and a second high reflection metal layer which is in contact with a second part of the semiconductor region and reflects the light from the light emitting structure. The second high reflection metal layer is overlapped with the first high reflection metal layer in a location separated from the first high reflection metal layer.