发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device of an embodiment includes a p-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus). The ratio of the concentration of the element D to the concentration of the element A in the above combination is higher than 0.33 but lower than 0.995, and the concentration of the element A forming part of the above combination is not lower than 1 x 10 18 cm -3 and not higher than 1 x 10 22 cm -3 . |
申请公布号 |
EP2770534(A1) |
申请公布日期 |
2014.08.27 |
申请号 |
EP20140156326 |
申请日期 |
2014.02.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMIZU, TATSUO;SHINOHE, TAKASHI;NISHIO, JOHJI;OTA, CHIHARU |
分类号 |
H01L29/167;H01L21/329;H01L21/336;H01L29/10;H01L29/739;H01L29/78;H01L29/868 |
主分类号 |
H01L29/167 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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