Growth substrate, nitride semiconductor device and method of manufacturing the same

摘要

Disclosed is a method of manufacturing a light emitting device. More particularly, disclosed are a growth substrate, a nitride semiconductor device and a method of manufacturing a light emitting device. The method includes preparing a growth substrate (100) including a metal substrate (110), forming a semiconductor structure (200) including a nitride-based semiconductor on the growth substrate, providing a support structure including a support layer (410) on the semiconductor structure, and separating the growth substrate from the semiconductor structure.