| 发明名称 | Photoresists and methods for use thereof | ||
| 摘要 | New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful for ion implant lithography protocols. | ||
| 申请公布号 | US8815754(B2) | 申请公布日期 | 2014.08.26 |
| 申请号 | US201012969183 | 申请日期 | 2010.12.15 |
| 申请人 | Rohm and Haas Electronics Materials LLC | 发明人 | Pohlers Gerhard |
| 分类号 | H01L21/31;H01L21/469 | 主分类号 | H01L21/31 |
| 代理机构 | Edwards Wildman Palmer LLP | 代理人 | Edwards Wildman Palmer LLP ;Corless Peter F. |
| 主权项 | 1. A method for providing an ion-implanted semiconductor substrate comprising: providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition, wherein the photoresist comprises as distinct components (1) a resin wherein less than 15 percent of total repeat units of the resin are aromatic, (2) a photoactive component and (3) a phenolic component; and applying ions to the substrate. | ||
| 地址 | Marlborough MA US | ||