发明名称 |
Method of manufacturing an ionizing radiation detection device |
摘要 |
A method for manufacturing an ionizing radiation detection device having a block of a semiconductor material adapted to undergo local separations of charges between positive and negative charges under the effect of ionizing radiation. The device including a first series of at least two collecting electrodes formed on the surface of the semiconductor block, and a second series of at least two non-collecting electrodes formed on a support and separated from the semiconductor block by an insulating layer. During processing, after forming the insulating layer on the support so as to cover the non-collecting electrodes, the block of semiconductor material bearing the collecting electrodes and the support bearing the non-collecting electrodes and the insulating layer are assembled. |
申请公布号 |
US8815627(B2) |
申请公布日期 |
2014.08.26 |
申请号 |
US201113170819 |
申请日期 |
2011.06.28 |
申请人 |
Commissariat a l'Energie Atomique et aux Energies Alternatives |
发明人 |
Monnet Olivier;Montemont Guillaume;Verger Loick;Gentet Marie-Claude |
分类号 |
H01L21/00;H01L31/08;H01L31/0224;G01T1/24 |
主分类号 |
H01L21/00 |
代理机构 |
Brinks Gilson & Lione |
代理人 |
Brinks Gilson & Lione |
主权项 |
1. A method for manufacturing an ionizing radiation detection device comprising a semiconductor block of a semiconductor material that undergoes local separations of charges between positive and negative charges under ionizing radiation and further including collecting electrodes in electrical contact with the semiconductor block, and non-collecting electrodes separated from the semiconductor block by a non-electrically conductive insulating layer, the method comprising:
forming the collecting electrodes on a surface of the semiconductor block; forming the non-collecting electrodes on a surface of a support; and depositing the non-electrically conductive insulating layer on the support at a temperature greater than 100° C. so as to encapsulate the non-collecting electrodes, the insulating layer comprising an insulating material having a relative permittivity of between 5 and 15, and a resistivity of between 1011 and 1012 ohm-cm, and after depositing the non-electrically conductive insulating layer on the support, assembling the semiconductor block bearing the collecting electrodes and the support bearing the non-collecting electrodes and the insulating layer, such that the non-collecting electrodes are electrically insulated from the collecting electrodes. |
地址 |
Paris FR |