发明名称 Method of manufacturing display unit
摘要 A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints.
申请公布号 US8815619(B2) 申请公布日期 2014.08.26
申请号 US201213613337 申请日期 2012.09.13
申请人 Sony Corporation 发明人 Arai Toshiaki;Fujimori Takashige
分类号 H01L21/00;H01L29/10 主分类号 H01L21/00
代理机构 Dentons US LLP 代理人 Dentons US LLP
主权项 1. A method of manufacturing a display unit, the method comprising: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements, wherein, the oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other, the target being made of an oxide semiconductor and including a plurality of divided portions that are jointed in a planar form, anda spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints.
地址 Tokyo JP