发明名称 | Method of manufacturing display unit | ||
摘要 | A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints. | ||
申请公布号 | US8815619(B2) | 申请公布日期 | 2014.08.26 |
申请号 | US201213613337 | 申请日期 | 2012.09.13 |
申请人 | Sony Corporation | 发明人 | Arai Toshiaki;Fujimori Takashige |
分类号 | H01L21/00;H01L29/10 | 主分类号 | H01L21/00 |
代理机构 | Dentons US LLP | 代理人 | Dentons US LLP |
主权项 | 1. A method of manufacturing a display unit, the method comprising: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements, wherein, the oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other, the target being made of an oxide semiconductor and including a plurality of divided portions that are jointed in a planar form, anda spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints. | ||
地址 | Tokyo JP |