发明名称 Light-emitting diode on a conductive substrate
摘要 A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.
申请公布号 US8815618(B2) 申请公布日期 2014.08.26
申请号 US200912541787 申请日期 2009.08.14
申请人 TSMC Solid State Lighting Ltd. 发明人 Chen Ding-Yuan;Yu Chen-Hua;Chiou Wen-Chih
分类号 H01L33/00;H01L21/78 主分类号 H01L33/00
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A method of forming a light-emitting diode (LED) device, the method comprising: providing a silicon-on-insulator (SOI) substrate comprising a silicon substrate, a buried oxide layer, and a topmost silicon layer, wherein the topmost silicon layer contains a porous layer; forming an LED structure over the topmost silicon layer of the SOI substrate; forming a conductive substrate over the LED structure in a manner such that the LED structure is disposed between the porous layer and the conductive substrate; and etching the porous layer to separate the silicon substrate from the LED structure.
地址 Hsin-Chu TW