Metal bonding method and metal bonded structure

摘要

The gap between first and second bonding portions is filled with a disperse solution obtained by dispersing copper micro-particles into a solution for copper oxide elution, so as to elute copper oxide configured as the outermost layer of the first bonding portion and copper oxide configured as the outermost layer of the second bonding portion, and copper oxide formed on the surface of each copper micro-particle. Pressure is applied to the first and second bonding portions using a press machine so as to raise the pressure of the disperse solution. At the same time, heat is applied under a relatively low temperature condition of 200° C. to 300° C., so as to remove the components contained in the disperse solution except for copper, thereby depositing copper. Thus, a first base portion and a second base portion are bonded via a copper bonded portion containing copper derived from the copper micro-particles.

主权项

1. A metal bonding method for bonding a first metal having a first oxide layer and a second metal having a second oxide layer, the first and second oxide layers each including a copper oxide as a principal component, the method comprising:
filling a gap between the first oxide layer of the first metal and the second oxide layer of the second metal with a solution including copper micro-particles, oxide including the copper oxide eluting into the solution from the first and second oxide layers; pressing the first metal and the second metal against each other to reduce the gap after the gap is filled with the solution; and applying heat to the gap with the first metal and the second metal pressed against each other, wherein grains derived from the copper micro-particles remain in the gap between the first metal and the second metal during the heat applying step, and the first metal and the second metal are bonded only with copper derived from at least the copper micro-particles.