Light emitting element and method for manufacturing same

摘要

According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.

主权项

1. A light emitting element, comprising:
a semiconductor stacked body including a light emitting layer; a first upper electrode provided on the semiconductor stacked body, the first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode on the semiconductor stacked body, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode provided under the semiconductor stacked body; a transparent conductive layer provided between the semiconductor stacked body and the lower electrode, the transparent conductive layer transmitting light emitted from the light emitting layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer provided between the transparent conductive layer and the lower electrode; and a current-blocking layer between the semiconductor stacked body and the transparent conductive layer or between the semiconductor stacked body and a pair of the first upper electrode and the second upper electrode, wherein at least one slit is provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.