发明名称 |
Low stress vias |
摘要 |
A component can include a substrate having a front surface and a rear surface remote therefrom, an opening extending from the rear surface towards the front surface, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The opening can define an inner surface between the front and rear surfaces. The conductive via can include a first metal layer overlying the inner surface and a second metal region overlying the first metal layer and electrically coupled to the first metal layer. The second metal region can have a CTE greater than a CTE of the first metal layer. The conductive via can have an effective CTE across a diameter of the conductive via that is less than 80% of the CTE of the second metal region. |
申请公布号 |
US8816505(B2) |
申请公布日期 |
2014.08.26 |
申请号 |
US201113193814 |
申请日期 |
2011.07.29 |
申请人 |
Tessera, Inc. |
发明人 |
Mohammed Ilyas;Haba Belgacem;Uzoh Cyprian |
分类号 |
H01L23/48;H01L21/283 |
主分类号 |
H01L23/48 |
代理机构 |
Lerner, David, Littenberg, Krumholz & Mentlik, LLP |
代理人 |
Lerner, David, Littenberg, Krumholz & Mentlik, LLP |
主权项 |
1. A component, comprising:
a substrate having a front surface and a rear surface remote therefrom, the substrate having a CTE less than 10 ppm/° C.; an opening extending from the rear surface towards the front surface, the opening defining an inner surface between the front and rear surfaces; and a conductive via extending within the opening, the conductive via including a first metal layer overlying the inner surface and a second metal region overlying the first metal layer and electrically coupled to the first metal layer, the second metal region having a CTE greater than a CTE of the first metal layer, the conductive via having an effective CTE across a diameter of the conductive via that is less than 80% of the CTE of the second metal region, wherein the substrate has a transition surface between the opening and at least one of the front or rear surfaces, wherein a radius of the transition surface is greater than 5% of a radius of the opening. |
地址 |
San Jose CA US |