Semiconductor device

摘要

For suggesting a structure capable of achieving both a low start-up voltage and high breakdown voltage, a SiC vertical diode includes a cathode electrode, an n++ cathode layer, an n− drift layer on the n++ cathode layer, a pair of p+ regions, an n+ channel region formed between the n− drift layer and the p+ region and sandwiched between the pair of p+ regions, n++ anode regions and an anode electrode formed on the n++ anode regions and the p+ regions.

主权项

1. A semiconductor device using silicon carbide as a substrate, the semiconductor device comprising:
a cathode electrode; a cathode layer of a first conductivity type formed on the cathode electrode of the substrate and having a first impurity concentration; a drift layer of the first conductivity type formed on the cathode layer and having a second impurity concentration lower than the first impurity concentration; a pair of first semiconductor regions of a second conductivity type opposite to the first conductivity type formed above the drift layer, and having a third impurity concentration; a channel region of the first conductivity type formed between the drift layer and the first semiconductor regions and sandwiched between the pair of first semiconductor regions and having a fourth impurity concentration higher than the second impurity concentration; an anode region of the first conductivity type formed on the channel region and the pair of first semiconductor regions, and having a fifth impurity concentration higher than the third impurity concentration and the fourth impurity concentration; and an anode electrode formed on the pair of first semiconductor regions and the anode region.