Group III nitride semiconductor light-emitting device and production method therefor

摘要

The present invention provides a Group III nitride semiconductor light-emitting device which is intended to relax stress applied to a light-emitting layer. The light-emitting device includes an MQW layer, and an n-side superlattice layer formed below the MQW layer. The n-side superlattice layer is formed by repeatedly depositing layer units, each unit including an InGaN layer, a GaN layer, and an n-GaN layer which are sequentially deposited from the side of the sapphire substrate. In the n-side superlattice layer, an InGaN layer more proximal to the MQW layer has a higher In compositional proportion. The In compositional proportion of the InGaN layer (which is most proximal to the MQW layer) of the n-side superlattice layer is 70% to 100% of the In compositional proportion of the InGaN layer (which is most proximal to the n-side superlattice layer) of the MQW layer.

主权项

1. A Group III nitride semiconductor light-emitting device comprising:
an underlying layer formed of a Group III nitride semiconductor; a strain relaxation layer formed on the underlying layer; and a light-emitting layer formed on the strain relaxation layer, wherein the light-emitting layer is formed by depositing a barrier layer and an In-containing well layer; the strain relaxation layer is formed of a superlattice layer including three or more layer units, each unit including at least an InGaN layer and a GaN layer; and among the layer units, a layer unit more proximal to the light-emitting layer includes an InGaN layer having a higher In compositional proportion, and the layer unit most proximal to the light-emitting layer includes an InGaN layer having an In compositional proportion which is 70% to 100% of the In compositional proportion of the well layer of the light-emitting layer.