| 主权项 |
1. A semiconductor light emitting device comprising:
a multilayer structure formed on a substrate and including a plurality of semiconductor layers including a light-emitting layer; wherein the multilayer structure includes an optical waveguide having a ridge structure provided at an upper part of the multilayer structure, the multilayer structure includes a first region and a second region in a plan view, and the optical waveguide is disposed between the first region and the second region in the plan view, the optical waveguide extends from a front facet to a rear facet of the multilayer structure, and includes a straight waveguide section which is inclined to a normal to the front facet of the multilayer structure and extends from the front facet, and a curved waveguide section which perpendicularly reaches the rear facet of the multilayer structure, the curved waveguide section is formed at a position closer to the rear facet of the multilayer structure than a center of the optical waveguide is, in the plan view, a first angle between the front facet and the straight waveguide section in the first region is smaller than a second angle between the front facet and the straight waveguide section in the second region, and a first groove is formed in the first region of the multilayer structure and spaced apart from the optical waveguide. |
