Method for epitaxial re-growth of semiconductor region

摘要

A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.

主权项

1. A method comprising:
forming Shallow Trench Isolation (STI) regions extending from a top surface of a semiconductor substrate into the semiconductor substrate; etching a portion of the semiconductor substrate between opposite sidewalls of the STI regions to form a recess; performing a treatment on a surface of the semiconductor substrate, with the surface being in the recess, wherein the treatment is performed using process gases comprising:
an oxygen-containing gas; andan etching gas capable of etching the semiconductor substrate; performing an epitaxy to grow a second semiconductor region starting from the surface; and after the performing the epitaxy, recessing the STI regions.