Method for manufacturing SOI substrate and semiconductor device

摘要

An amorphous semiconductor layer is formed over a first single crystal semiconductor layer provided over a glass substrate or a plastic substrate with an insulating layer therebetween. The amorphous semiconductor layer is formed by a CVD method at a deposition temperature of higher than or equal to 100° C. and lower than or equal to 275° C. with use of a silane-based gas not diluted. Heat treatment is performed so that the amorphous semiconductor layer solid-phase epitaxially grows. In such a manner, an SOI substrate including a thick single crystal semiconductor layer is manufactured.

主权项

1. A method for manufacturing an SOI substrate, comprising:
preparing a first single crystal semiconductor layer provided over a substrate with an insulating layer interposed therebetween, the first single crystal semiconductor layer being in direct contact with the insulating layer; forming an amorphous semiconductor layer over the first single crystal semiconductor layer by a plasma CVD method at a deposition temperature of higher than or equal to 150° C. and lower than 250° C. in an atmosphere containing only a silane-based gas; and performing heat treatment to make the amorphous semiconductor layer solid-phase epitaxially grow, so that a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer.