发明名称 LIQUID PROCESSING APPARATUS FOR SUBSTRATE AND LIQUID PROCESSING METHOD
摘要 Disclosed is a liquid processing apparatus and a liquid processing method, which can process an entire wafer at a sufficiently high temperature and can sufficiently suppress adhesion of particles on a surface of the wafer, when the peripheral portion of the wafer is processed. The liquid processing apparatus includes a holding part to hold the substrate, a rotation driving part to rotate the holding part, and a shield unit. The shield unit includes an opposed plate opposed to the substrate held by the holding part, a heating part to heat the substrate through the opposed plate, and a heated gas supplying part to supply heated gas to a surface of the substrate held by the holding part.
申请公布号 KR101434708(B1) 申请公布日期 2014.08.26
申请号 KR20100073405 申请日期 2010.07.29
申请人 发明人
分类号 H01L21/302 主分类号 H01L21/302
代理机构 代理人
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