Silicon epitaxial wafer and method for production thereof

摘要

Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).

主权项

1. A method for producing a silicon epitaxial wafer, comprising:
growing, using an epitaxial apparatus, an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than one degree; and polishing a surface of the epitaxial layer until a haze level at the surface of the epitaxial layer becomes to be 0.18 ppm or less, wherein the polishing is performed before 10 hours elapse and after completing the growing and taking a grown wafer off of the epitaxial apparatus.