发明名称 APPARATUS AND METHOD FOR CONTROLLING PLASMA DENSITY PROFILE
摘要 A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.
申请公布号 KR101433386(B1) 申请公布日期 2014.08.26
申请号 KR20087014602 申请日期 2006.12.08
申请人 发明人
分类号 H05H1/00 主分类号 H05H1/00
代理机构 代理人
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