发明名称 COMPOSITE MATERIAL WAFER AND MANUFACTURING METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a composite material wafer and a manufacturing method thereof.SOLUTION: A composite material wafer 10 comprises a substrate 11 and an SiC-based functional layer 18. The substrate includes a porous carbon substrate core and an encapsulation layer 14 for encapsulating the substrate core 12. The Sic-based functional layer contains at least one of a carbide and a silicide produced by reaction between a part of the SiC-based functional layer and carbide and silicide production metals in an interface region with the encapsulation layer. The quantity of the carbide and silicide production metals summed up over thickness of the functional layer is 10mg/cmto 0.1 mg/cm.</p>
申请公布号 JP2014154885(A) 申请公布日期 2014.08.25
申请号 JP20140021034 申请日期 2014.02.06
申请人 INFINEON TECHNOLOGIES AG 发明人 RUDOLF BERGER ; WOLFGANG LEHNERT ; ANTON MAUDER ; GUENTHER RUHL ; ROLAND RUPP ; HANS-JOACHIM SCHULZE
分类号 H01L21/02 主分类号 H01L21/02
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