RFID TAG PRODUCTION METHOD FOR LOW DRIVING VOLATAGE AND RFID TAG THEREOF

摘要

Disclosed are a method to manufacture an RFID tag for a low voltage and the RFID tag using the same. The method of manufacturing the RFID tag for a low voltage having a predetermined memory capacity is by firstly to print out a transistor (TR) based on a P-type single-wall carbon nanotube (SWNT) on a flexible film substrate; and then to print out an RFID tag circuit of a complementary metal oxide semiconductor (CMOS) type by switching a predetermined P-type TR to an N-type SWNT-based transistor by using an N-doping ink on the surface, thereby enabling to manufacture the RFID tag for a 4-96 bit low-voltage capable of driving a DC 5V.