发明名称 |
CONDUCTIVE OXIDE AND SEMICONDUCTOR OXIDE FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a conductive oxide which has a lower rare metal content, and can suppress a reduction in a forming speed of a semiconductor oxide film, and to provide a semiconductor oxide film formed using the conductive oxide.SOLUTION: A conductive oxide is a conductive oxide having a crystal phase formed from a basic structure which is the same crystal structure as that of InAlZnO. The conductive oxide is formed from a complex oxide of indium, aluminum and bivalent metal. An atomic concentration ratio of the aluminum to the indium in the crystal phase is larger than 1 and 1.2 or less. An atomic concentration ratio of the bivalent metal to the indium in the crystal phase is larger than 1 and 1.2 or less. |
申请公布号 |
JP2014152084(A) |
申请公布日期 |
2014.08.25 |
申请号 |
JP20130024397 |
申请日期 |
2013.02.12 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
MIYANAGA YOSHINORI;AWATA HIDEAKI;KURISU KENICHI |
分类号 |
C04B35/00;C23C14/08;H01L21/363 |
主分类号 |
C04B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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