发明名称 CONDUCTIVE OXIDE AND SEMICONDUCTOR OXIDE FILM
摘要 PROBLEM TO BE SOLVED: To provide a conductive oxide which has a lower rare metal content, and can suppress a reduction in a forming speed of a semiconductor oxide film, and to provide a semiconductor oxide film formed using the conductive oxide.SOLUTION: A conductive oxide is a conductive oxide having a crystal phase formed from a basic structure which is the same crystal structure as that of InAlZnO. The conductive oxide is formed from a complex oxide of indium, aluminum and bivalent metal. An atomic concentration ratio of the aluminum to the indium in the crystal phase is larger than 1 and 1.2 or less. An atomic concentration ratio of the bivalent metal to the indium in the crystal phase is larger than 1 and 1.2 or less.
申请公布号 JP2014152084(A) 申请公布日期 2014.08.25
申请号 JP20130024397 申请日期 2013.02.12
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MIYANAGA YOSHINORI;AWATA HIDEAKI;KURISU KENICHI
分类号 C04B35/00;C23C14/08;H01L21/363 主分类号 C04B35/00
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