| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared radiation source device achieving improvement in output efficiency of infrared rays.SOLUTION: An infrared radiation source device comprises: a semiconductor substrate 1 that has a gap section 10 having an opening in a part of an upper surface of the semiconductor substrate 1; a thin film 2 that is formed on the upper surface of the semiconductor substrate 1 in such a manner that the thin film 2 covers the opening of the gap section 10, and forms a diaphragm 21 above the gap section 10; a heater 3 that is formed in such a manner that the heater 3 includes an upper surface of the diaphragm 21 and provides heat when an electric current is passed through the heater 3; a radiation film 4 that is formed an upper surface of the heater 3 and stabilizes the output efficiency of infrared rays; and a protective film 5 that is formed on an upper surface of the radiation film 4 and has thermal insulating properties. |
