主权项 |
1. A non-volatile memory, comprising:
an oxide and polysilicon stack structure, disposed on a substrate, wherein there are recesses in the substrate at two sides of the oxide and polysilicon stack structure, the oxide and polysilicon stack structure comprising:
an oxide layer, disposed on the substrate, wherein there is an interface between the oxide layer and the substrate; anda polysilicon layer, disposed on the oxide layer; and charge storage layers, disposed in the recesses and extend to a side wall of the oxide and polysilicon stack structure, and a top surface of each of the charge storage layers is higher than the interface. |