| 摘要 |
According to one embodiment, a memory device includes first and second conductive layers, a variable resistance portion, and a multiple tunnel junction portion. The variable resistance portion is provided between the first and second conductive layers. The multiple tunnel junction portion is provided between the first conductive layer and the variable resistance portion, and includes first, second, and third tunnel insulating films, and first and second nanocrystal layers. The first nanocrystal layer between the first and second tunnel insulating films includes first conductive minute particles. The second nanocrystal layer between the second and third tunnel insulating films includes second conductive minute particles. |
| 主权项 |
1. A memory device comprising:
a first conductive layer and a second conductive layer; a variable resistance portion provided between the first conductive layer and the second conductive layer, and having one of a low-resistance state and a high-resistance state; and a first multiple tunnel junction portion provided between the first conductive layer and the variable resistance portion, and including first, second, and third tunnel insulating films, a first nanocrystal layer provided between the first and second tunnel insulating films and including first conductive minute particles, and a second nanocrystal layer provided between the second and third tunnel insulating films and including second conductive minute particles. |
