发明名称 Nanoparticle layer and Nanoparticle capacitor, Flash memory comprising the same, and preparation methods thereof
摘要 A nano particle charge storing device is provided to form nano particles of which a size is uniform to high density into a single layer using a new process and to leak no current. A nano particle charge storing device contains a first insulating layer, a high density nano particle film and a second insulating layer formed on the nano particle film. The metal organic film is metallocene(M(C5H5)2, M is metal) or a metallocene derivative. The nano particle film is metal, alloy, semiconducting metal and a metal compound. The energy is selected between photon, electron beam, radiation ray and microwave.
申请公布号 KR101432151(B1) 申请公布日期 2014.08.21
申请号 KR20070071221 申请日期 2007.07.16
申请人 发明人
分类号 B82B3/00;H01L21/8247;H01L27/115 主分类号 B82B3/00
代理机构 代理人
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