| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing increase in manufacturing costs, improving connection reliability of a metal layer directly bonded on one face of a SiC substrate and further ensuring ohmic contact of the metal layer with respect to the SiC substrate, and a method for manufacturing the semiconductor device.SOLUTION: In a semiconductor device 1 including an SiC substrate 2, a high carbon concentration SiC layer 3 containing more highly concentrated carbon than that of a surface layer portion on a side of a front surface 21 is formed on a surface layer portion on a side of a rear surface 22 of the SiC substrate 2. A drain electrode 17 is directly bonded to a surface of the high carbon concentration SiC layer 3. |
