发明名称 |
PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION |
摘要 |
A photolithography mask design in simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features. |
申请公布号 |
US2014237434(A1) |
申请公布日期 |
2014.08.21 |
申请号 |
US201113977644 |
申请日期 |
2011.12.29 |
申请人 |
Singh Vivek K.;Baidva Bikrsm;Dandekar Omkar S.;Erten Hale |
发明人 |
Singh Vivek K.;Baidva Bikrsm;Dandekar Omkar S.;Erten Hale |
分类号 |
G03F1/36 |
主分类号 |
G03F1/36 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
optimizing a target mask design for a photolithography mask the target mask design comprising a plurality of design features, the optimized design having a plurality of assist features to print at least a portion of the design features; identifying medial axes of the design and assist features on the optimized mask as lines; associating design and assist features on the optimized mask with the lines; pruning lines that are distant from a respective design feature; simplifying the lines that are not pruned; and thickening the simplified lines to form assist features. |
地址 |
Portland OR US |