发明名称 PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION
摘要 A photolithography mask design in simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.
申请公布号 US2014237434(A1) 申请公布日期 2014.08.21
申请号 US201113977644 申请日期 2011.12.29
申请人 Singh Vivek K.;Baidva Bikrsm;Dandekar Omkar S.;Erten Hale 发明人 Singh Vivek K.;Baidva Bikrsm;Dandekar Omkar S.;Erten Hale
分类号 G03F1/36 主分类号 G03F1/36
代理机构 代理人
主权项 1. A method comprising: optimizing a target mask design for a photolithography mask the target mask design comprising a plurality of design features, the optimized design having a plurality of assist features to print at least a portion of the design features; identifying medial axes of the design and assist features on the optimized mask as lines; associating design and assist features on the optimized mask with the lines; pruning lines that are distant from a respective design feature; simplifying the lines that are not pruned; and thickening the simplified lines to form assist features.
地址 Portland OR US
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