摘要 |
<p>The present invention provides a light emitting diode (2), which comprises a first LED die (20a), a second LED die (20b), and a dummy LED die (20c), wherein the second LED die (20b) is disposed between the first LED die (20a)and the dummy LED die (20c), and each die comprises a first semi-conductive layer (200), a second semi-conductive layer (202), and a multiple quantum well layer (201) disposed between the first (200) and the second (202) semi-conductive layers. The first semi-conductive layer (200) of the first LED (20a) die is coupled to the second semi-conductive layer (202) of the second LED die (20b), and the first semi-conductive layer (200) of the second LED die (20b) is coupled to the first (200) and second (202) semi-conductive layers of the dummy LED die (20c).
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