发明名称 Light emitting diode
摘要 <p>The present invention provides a light emitting diode (2), which comprises a first LED die (20a), a second LED die (20b), and a dummy LED die (20c), wherein the second LED die (20b) is disposed between the first LED die (20a)and the dummy LED die (20c), and each die comprises a first semi-conductive layer (200), a second semi-conductive layer (202), and a multiple quantum well layer (201) disposed between the first (200) and the second (202) semi-conductive layers. The first semi-conductive layer (200) of the first LED (20a) die is coupled to the second semi-conductive layer (202) of the second LED die (20b), and the first semi-conductive layer (200) of the second LED die (20b) is coupled to the first (200) and second (202) semi-conductive layers of the dummy LED die (20c). </p>
申请公布号 EP2706570(A3) 申请公布日期 2014.08.20
申请号 EP20120189356 申请日期 2012.10.19
申请人 SEMILEDS OPTOELECTRONICS CO., LTD. 发明人 DOAN, TRUNG-TRI;CHENG, CHAO-CHEN;SHIH, YI-FENG
分类号 H01L25/075;H01L27/15;H01L33/62 主分类号 H01L25/075
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