| 摘要 |
PROBLEM TO BE SOLVED: To reform polysilicon grain boundary using a laser beam by efficiently providing the grain boundary with a suitable energy without affecting a substrate portion and a crystalline portion. SOLUTION: A method for reforming polysilicon grain boundary reforms the grain boundary by irradiating polysilicon with a pulse laser beam. The pulse laser beam is a visible light with a wavelength of≥400 nm. The irradiation intensity of the pulse laser beam is an energy density under which the center of the polysilicon crystal grain is not melted. Preferably, the irradiation intensity of the pulse laser beam should be the energy density under which the vicinity of the polysilicon grain boundary is partially melted. COPYRIGHT: (C)2010,JPO&INPIT |
