| 摘要 |
Provided at low cost is a multi-quantum well solar cell such that recombination of carriers generated by light absorption is inhibited and high photoelectric conversion efficiency is achieved. This multi-quantum well solar cell comprises a substrate, a p-type semiconductor layer, a barrier layer, a well layer, an n-type semiconductor layer, and electrodes and is characterized in that the barrier layer and the well layer comprise crystals having a wurtzite crystal structure, the well layer is composed of a metal-oxynitride that comprises Zn and at least one element selected from a group consisting of In, Ga, and Al, and a piezoelectric electric field is generated in the well layer. This allows for the provision of a multi-quantum well solar cell such that recombination of carriers generated by light absorption is inhibited and high photoelectric conversion efficiency is achieved. |
