| 摘要 |
<p>The invention concerns an idea of planning irradiation of two target points (81, 9) with a beam approaching target points (72) for the purpose of depositing a first target dose distribution in a first of the two target volumes (81, 92) and a second target dose distribution in a second of the two target volumes (81, 92). The idea is characterized by the following steps: assigning target points (72) to one of the target volumes (81, 92), detecting an overlap of a first deposition caused by approaching a target point (72) assigned to the first target volume (81, 92) with a second deposition caused by approaching a target point (72) assigned to the second target volume (81, 92), and adapting the planning process for at least one of the target points (72) whose approach contributes to the overlap of the first and second deposition.</p> |
