发明名称 POWER SEMI-CONDUCTOR CHIP WITH A METAL MOULDED BODY FOR CONTACTING THICK WIRES OR STRIPS, AND METHOD FOR THE PRODUCTION THEREOF
摘要 The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.
申请公布号 EP2766922(A1) 申请公布日期 2014.08.20
申请号 EP20120769904 申请日期 2012.09.10
申请人 DANFOSS SILICON POWER GMBH 发明人 BECKER, MARTIN;EISELE, RONALD;OSTERWALD, FRANK;RUDZKI, JACEK
分类号 H01L21/60;H01L23/485 主分类号 H01L21/60
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