发明名称 |
System and method for controlling nonvolatile memory |
摘要 |
A memory system, comprises a nonvolatile memory comprising multiple memory cells, and a memory controller configured to control respective cell levels of the memory cells by assigning a logical address of each memory cell to one of multiple address groups according to a frequency with which the logical address has been accessed, determining a cell level for each address group, and controlling each memory cell to have the cell level of the address group to which its logical address is assigned. |
申请公布号 |
US8812775(B2) |
申请公布日期 |
2014.08.19 |
申请号 |
US201213430850 |
申请日期 |
2012.03.27 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Byoung Geun |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A memory system, comprising:
a nonvolatile memory comprising multiple memory cells; and a memory controller configured to control respective cell levels of the memory cells by assigning a logical address of each memory cell to one of multiple address groups according to a frequency with which the logical address has been accessed, determining a cell level for each address group, and controlling each memory cell to have the cell level of the address group to which its logical address is assigned, wherein the memory controller changes a number of memory cells operating at each cell level such that a storage capacity of the nonvolatile memory is maintained substantially constant. |
地址 |
Suwon-si, Gyeonggi-do KR |