| 发明名称 | Front side implanted guard ring structure for backside | ||
| 摘要 | A method of forming a backside illuminated image sensor includes forming a guard ring structure of a predetermined depth in a front-side surface of a semiconductor substrate, the guard ring structure outlining a two-dimensional array of pixels, each pixel of the array of pixels separated from an adjacent pixel by the guard ring structure. The method further includes forming at least one image sensing element on the front-side surface of the semiconductor substrate, the at least one image sensing element being formed in a pixel of the array of pixels and surrounded by the guard ring structure. The method further includes reducing a thickness of the semiconductor substrate until the guard ring structure is co-planar with a back-side surface of the semiconductor substrate. | ||
| 申请公布号 | US8810700(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201313971242 | 申请日期 | 2013.08.20 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wang Wen-De;Yaung Dun-Nian;Liu Jen-Cheng;Chuang Chun-Chieh;Lin Jeng-Shyan |
| 分类号 | H04N5/335;H04N5/217 | 主分类号 | H04N5/335 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method of forming a backside illuminated image sensor, the method comprising: forming a guard ring structure of a predetermined depth in a front-side surface of a semiconductor substrate, the guard ring structure outlining a two-dimensional array of pixels, each pixel of the array of pixels separated from an adjacent pixel by the guard ring structure; forming at least one image sensing element on the front-side surface of the semiconductor substrate, the at least one image sensing element being formed in a pixel of the array of pixels and surrounded by the guard ring structure; and reducing a thickness of the semiconductor substrate until the guard ring structure is co-planar with a back-side surface of the semiconductor substrate. | ||
| 地址 | TW | ||