Method for manufacturing a submillimetric electrically conductive grid coated with an overgrid

摘要

A method of manufacturing a submillimetric electroconductive grid coated with an overgrid on a substrate includes: the production of a mask having submillimetric openings by the deposition of a solution of colloidal polymeric nanoparticles that are stabilized and dispersed in a solvent, the polymeric particles having a glass transition temperature Tg and the drying of the masking layer at a temperature below the Tg until the mask, with straight edges, is obtained, the formation of the electroconductive grid by a deposition of electroconductive material, referred to as grid material, a heat treatment of the masking layer with the grid material at a temperature greater than or equal to 0.8 times Tg, thus creating a space between the edges of mask zones and the lateral edges of the grid; a deposition of a layer, referred to as an overlayer, made of a material referred to as overlayer material, on the grid and in the space between the edges of mask zones and the lateral edges of the grid; a removal of the masking layer. The invention also relates to the grid thus obtained.

主权项

1. A process for manufacturing a submillimetric electroconductive grid coated with an overgrid on a main face of a substrate comprising:
producing a network mask having submillimetric openings on the main face, the producing including:
depositing a masking layer from a solution of colloidal polymeric nanoparticles that are stabilized and dispersed in a solvent, the polymeric nanoparticles having a glass transition temperature Tg; anddrying the masking layer at a temperature below said temperature Tg until the network mask having a network of openings is obtained, the openings separating mask zones with substantially straight edges in the network mask; forming the electroconductive grid from the network mask, the forming comprising depositing at least one electroconductive grid material until a fraction of the depth of the openings is filled; heat treating the masking layer with the electroconductive grid material at a temperature greater than or equal to 0.8 times Tg, resulting in a shrinkage of the mask zones, thus creating a space between the edges of the mask zones and lateral edges of the grid; forming the overgrid on the grid, the forming of the overgrid comprising depositing an overlayer, made of an overlayer material, on the grid and in the space between the edges of mask zones and the lateral edges of the grid; removing the masking layer, until the electroconductive grid coated with the overgrid is revealed.