| 发明名称 | Semiconductor structure and method for manufacturing the same | ||
| 摘要 | Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects. | ||
| 申请公布号 | US8809955(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201113379357 | 申请日期 | 2011.04.26 |
| 申请人 | Institute of Microelectronics, Chinese Academy of Sciences | 发明人 | Zhu Huilong;Wu Binneng;Xiao Weiping;Wu Hao;Liang Qingqing |
| 分类号 | H01L29/786;H01L21/8236;H01L29/10;H01L29/66 | 主分类号 | H01L29/786 |
| 代理机构 | Osha Liang LLP | 代理人 | Osha Liang LLP |
| 主权项 | 1. A semiconductor structure, comprising: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to said super-steep retrograde island. | ||
| 地址 | Beijing CN | ||