发明名称 Voltage regulator with transient response
摘要 A voltage regulator having good transient response characteristics and maintaining stable operation is provided. The voltage regulator includes: a first MOS transistor having a gate terminal connected to an output terminal of the differential amplifier circuit; a first constant current source provided between the first MOS transistor and a ground terminal; an output MOS transistor having a gate terminal connected to a drain terminal of the first MOS transistor via a phase compensation circuit; a second MOS transistor having a gate terminal to which an output of the differential amplifier circuit is input and a drain terminal connected to the gate terminal of the output MOS transistor; and a second constant current source provided between the second MOS transistor and a ground terminal.
申请公布号 US8810219(B2) 申请公布日期 2014.08.19
申请号 US201213606722 申请日期 2012.09.07
申请人 Seiko Instruments Inc. 发明人 Suzuki Teruo
分类号 G05F1/10;G05F1/656;G05F1/575 主分类号 G05F1/10
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A voltage regulator comprising: a differential amplifier circuit which receives an input of a reference voltage output from a reference voltage circuit and an input of a feedback voltage obtained by dividing an output voltage of the voltage regulator and then amplifies and outputs a difference between the reference voltage and the feedback voltage; a first MOS transistor having a gate terminal connected to an output terminal of the differential amplifier circuit; a first constant current source which is provided between the first MOS transistor and a ground terminal; an output MOS transistor having a gate terminal connected to a drain terminal of the first MOS transistor via a phase compensation circuit; a second MOS transistor having a gate terminal to which an output of the differential amplifier circuit is input and a drain terminal connected to the gate terminal of the output MOS transistor; and a second constant current source provided between the drain terminal of the second MOS transistor and a ground terminal.
地址 Chiba JP